Samsung MZ-QL21T900
PM9A3 MZ-QL21T900 1.92 TB SSD
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PM9A3 MZ-QL21T900 1.92 TB SSD
| 4KB Random Read: | 850000 IOPS |
|---|---|
| 4KB Random Write: | 130000 IOPS |
| Capacity: | 1.92 TB |
| Compatible Bay: | 2.5" |
| Depth: | 100.2 mm |
| Device Type: | Solid state drive - internal |
| Encryption Algorithm: | 256-bitAES |
| Features: | Samsung Elpis Controller, Samsung V-NAND TLC Technology, Low Power SDRAM cache, TRIM support, Auto Garbage Collection Algorithm, Worldwide Name (WWN), NGUID supported, S.M.A.R.T. |
| Form Factor: | 2.5" |
| Hardware Encryption: | Yes |
| Height: | 6.8 mm |
| Interface: | U.2 PCIe 4.0 x4 (NVMe) |
| Interfaces: | PCI Express 4.0 x4 U.2 (NVMe) |
| Internal Data Rate: | 6800 MBps (read) / 2700 MBps (write) |
| MTBF: | 2,000,000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | Triple-level cell (TLC) |
| Power Consumption: | 10 watt (read) ¦ 12.5 watt (write) ¦ 3.5 watt (idle) |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Software Included: | Samsung SSD DC Tool kit |
| Version: | original |
| Weight: | 90 g |
| Width: | 69.85 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
| Warnings: | Warnings Storage & Memories International.pdf |
| Safety instructions: | Safety instructions Storage & Memories International.pdf |
PM9A3 MZ-QL21T900 1.92 TB SSD
| 4KB Random Read: | 850000 IOPS |
|---|---|
| 4KB Random Write: | 130000 IOPS |
| Capacity: | 1.92 TB |
| Compatible Bay: | 2.5" |
| Depth: | 100.2 mm |
| Device Type: | Solid state drive - internal |
| Encryption Algorithm: | 256-bitAES |
| Features: | Samsung Elpis Controller, Samsung V-NAND TLC Technology, Low Power SDRAM cache, TRIM support, Auto Garbage Collection Algorithm, Worldwide Name (WWN), NGUID supported, S.M.A.R.T. |
| Form Factor: | 2.5" |
| Hardware Encryption: | Yes |
| Height: | 6.8 mm |
| Interface: | U.2 PCIe 4.0 x4 (NVMe) |
| Interfaces: | PCI Express 4.0 x4 U.2 (NVMe) |
| Internal Data Rate: | 6800 MBps (read) / 2700 MBps (write) |
| MTBF: | 2,000,000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | Triple-level cell (TLC) |
| Power Consumption: | 10 watt (read) ¦ 12.5 watt (write) ¦ 3.5 watt (idle) |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Software Included: | Samsung SSD DC Tool kit |
| Version: | original |
| Weight: | 90 g |
| Width: | 69.85 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
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