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| 4KB Random Read: | 75000 IOPS |
|---|---|
| 4KB Random Write: | 85000 IOPS |
| Average Latency: | 50 μs |
| Capacity: | 512 GB |
| Compatible Bay: | 2.5" |
| Device Type: | Solid state drive - internal |
| Drive Transfer Rate: | 600 MBps (external) |
| Encryption Algorithm: | 256-bitAES |
| Features: | Smart Response Technology, End-to-end data protection, Rapid Start Technology |
| Form Factor: | 2.5" |
| Hardware Encryption: | Yes |
| Height: | 7 mm |
| Interface: | SATA 6Gb/s |
| Interfaces: | 1 x SATA 6 Gb/s |
| Internal Data Rate: | 500 MBps |
| MTBF: | 1,600,000 hours |
| Manufacturer: | Intel |
| Max Operating Temperature: | 70 °C |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Non-Recoverable Errors: | 1 per 10^15 |
| Power Consumption: | 4.5 watt (active) ¦ 50 mW (idle) |
| Version: | original |
| GPSR - economic actor: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
|---|---|
| GPSR - product manufacturer: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
| GPSR - EU responsible person: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
| EU Data-Act-Url: | https://www.intel.de/content/www/de/de/privacy/intel-privacy-notice.html |
| Warnings: | Warnings Processors International.pdf |
| Safety instructions: | Safety instructions Processors International.pdf |
| 4KB Random Read: | 75000 IOPS |
|---|---|
| 4KB Random Write: | 85000 IOPS |
| Average Latency: | 50 μs |
| Capacity: | 512 GB |
| Compatible Bay: | 2.5" |
| Device Type: | Solid state drive - internal |
| Drive Transfer Rate: | 600 MBps (external) |
| Encryption Algorithm: | 256-bitAES |
| Features: | Smart Response Technology, End-to-end data protection, Rapid Start Technology |
| Form Factor: | 2.5" |
| Hardware Encryption: | Yes |
| Height: | 7 mm |
| Interface: | SATA 6Gb/s |
| Interfaces: | 1 x SATA 6 Gb/s |
| Internal Data Rate: | 500 MBps |
| MTBF: | 1,600,000 hours |
| Manufacturer: | Intel |
| Max Operating Temperature: | 70 °C |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Non-Recoverable Errors: | 1 per 10^15 |
| Power Consumption: | 4.5 watt (active) ¦ 50 mW (idle) |
| Version: | original |
| GPSR - economic actor: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
|---|---|
| GPSR - product manufacturer: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
| GPSR - EU responsible person: | Intel, Deutschland, Am Campeon 10, Neubiberg, 85579, info.de@intel.com |
| EU Data-Act-Url: | https://www.intel.de/content/www/de/de/privacy/intel-privacy-notice.html |
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