Samsung MZ-V9S1T0BW
Samsung 990 EVO Plus NVMe - M.2 SSD - encrypted - 1 TB
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| Capacity: | 1 TB |
|---|---|
| Compatible Bay: | M.2 2280 |
| Depth: | 80.15 mm |
| Device Type: | Solid state drive - internal |
| Enclosure Material: | Nickel coating |
| Encryption Algorithm: | 256-bitAES |
| Features: | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 |
| Form Factor: | M.2 2280 |
| Hardware Encryption: | Yes |
| Height: | 2.38 mm |
| Interface: | PCIe 5.0 x2 (NVMe) |
| Internal Data Rate: | 7150 MBps (read) / 6300 MBps (write) |
| MTBF: | 1.500.000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Maximum 4KB Random Read: | 850000 IOPS |
| Maximum 4KB Random Write: | 1350000 IOPS |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | Triple-level cell (TLC) |
| Power Consumption: | 4.3 watt (read) ¦ 4.2 watt (write) ¦ 60 mW (standby) ¦ 5 mW (sleep) |
| Shock Tolerance (non-operating): | 1500 g @ 0.5 ms |
| Software Included: | Samsung Magician Software |
| Version: | original |
| Vibration Tolerance (non-operating): | 20 g @ 20-2000 Hz |
| Weight: | 9 g |
| Width: | 22.15 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
| Warnings: | Warnings Storage & Memories International.pdf |
| Safety instructions: | Safety instructions Storage & Memories International.pdf |
| Capacity: | 1 TB |
|---|---|
| Compatible Bay: | M.2 2280 |
| Depth: | 80.15 mm |
| Device Type: | Solid state drive - internal |
| Enclosure Material: | Nickel coating |
| Encryption Algorithm: | 256-bitAES |
| Features: | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 |
| Form Factor: | M.2 2280 |
| Hardware Encryption: | Yes |
| Height: | 2.38 mm |
| Interface: | PCIe 5.0 x2 (NVMe) |
| Internal Data Rate: | 7150 MBps (read) / 6300 MBps (write) |
| MTBF: | 1.500.000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Maximum 4KB Random Read: | 850000 IOPS |
| Maximum 4KB Random Write: | 1350000 IOPS |
| Min Operating Temperature: | 0 °C |
| NAND Flash Memory Type: | Triple-level cell (TLC) |
| Power Consumption: | 4.3 watt (read) ¦ 4.2 watt (write) ¦ 60 mW (standby) ¦ 5 mW (sleep) |
| Shock Tolerance (non-operating): | 1500 g @ 0.5 ms |
| Software Included: | Samsung Magician Software |
| Version: | original |
| Vibration Tolerance (non-operating): | 20 g @ 20-2000 Hz |
| Weight: | 9 g |
| Width: | 22.15 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
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