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Samsung MZ-77Q8T0B/AM

870 QVO SATA III 2.5 inch SSD - 8 TB

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870 QVO SATA III 2.5 inch SSD - 8 TB
4KB Random Read: 11000 IOPS
4KB Random Write: 35000 IOPS
Buffer Size: 8 GB
Capacity: 8 TB
Compatible Bay: 2.5"
Depth: 100 mm
Device Type: Solid state drive - internal
Encryption Algorithm: 256-bit AES
Features: TRIM support, Garbage Collection technology, sleep mode, Worldwide Name (WWN), TurboWrite Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, Samsung V-NAND 4bit MLC Technology, 1 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES, IEEE 16
Form Factor: 2.5"
Hardware Encryption: Yes
Height: 6.8 mm
Interface: SATA 6Gb/s
Interfaces: 1 x SATA 6 Gb/s - 7 pin Serial ATA
Internal Data Rate: 560 MBps (read) / 530 MBps (write)
MTBF: 1,500,000 hours
Manufacturer: Samsung
Max Operating Temperature: 70 °C
Maximum 4KB Random Read: 98000 IOPS
Maximum 4KB Random Write: 88000 IOPS
Min Operating Temperature: 0 °C
NAND Flash Memory Type: Multi-level cell (MLC)
Power Consumption: 2.2 Watt (average) ¦ 4 Watt (maximum) ¦ 30 mW (idle)
SSD Endurance: 2.88 PB
Software Included: Samsung Magician Software 6.1
Version: original
Weight: 57 g
Width: 69.85 mm
GPSR - economic actor: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de
GPSR - product manufacturer: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de
GPSR - EU responsible person: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de
Warnings: Warnings Storage & Memories International.pdf
Safety instructions: Safety instructions Storage & Memories International.pdf
Quantity: Product Quantity: Enter the desired amount or use the buttons to increase or decrease the quantity.
5 available For special requests or large quantities, please contact us.

Delivery time: ca. 5-10 days The stated delivery times apply to shipping within Germany. Information on deliveries to other countries can be found here.

Product number: 1492047-1101535
870 QVO SATA III 2.5 inch SSD - 8 TB
4KB Random Read: 11000 IOPS
4KB Random Write: 35000 IOPS
Buffer Size: 8 GB
Capacity: 8 TB
Compatible Bay: 2.5"
Depth: 100 mm
Device Type: Solid state drive - internal
Encryption Algorithm: 256-bit AES
Features: TRIM support, Garbage Collection technology, sleep mode, Worldwide Name (WWN), TurboWrite Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, Samsung V-NAND 4bit MLC Technology, 1 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES, IEEE 16
Form Factor: 2.5"
Hardware Encryption: Yes
Height: 6.8 mm
Interface: SATA 6Gb/s
Interfaces: 1 x SATA 6 Gb/s - 7 pin Serial ATA
Internal Data Rate: 560 MBps (read) / 530 MBps (write)
MTBF: 1,500,000 hours
Manufacturer: Samsung
Max Operating Temperature: 70 °C
Maximum 4KB Random Read: 98000 IOPS
Maximum 4KB Random Write: 88000 IOPS
Min Operating Temperature: 0 °C
NAND Flash Memory Type: Multi-level cell (MLC)
Power Consumption: 2.2 Watt (average) ¦ 4 Watt (maximum) ¦ 30 mW (idle)
SSD Endurance: 2.88 PB
Software Included: Samsung Magician Software 6.1
Version: original
Weight: 57 g
Width: 69.85 mm
GPSR - economic actor: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de
GPSR - product manufacturer: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de
GPSR - EU responsible person: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay @ samsung.de

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