Samsung MZ1L21T9HCLS-00A07
Samsung SSD MZ1L21T9HCLS-00A07 PM9A3 1.9TB M.2 22X110 NVMe GEN4 PCIE Bare
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Samsung SSD MZ1L21T9HCLS-00A07 PM9A3 1.9TB M.2 22X110 NVMe GEN4 PCIE Bare
| 4KB Random Read: | 800000 IOPS |
|---|---|
| 4KB Random Write: | 85000 IOPS |
| Bytes per Sector: | 512 |
| Capacity: | 1.92 TB |
| Compatible Bay: | M.2 22110 |
| Compliant Standards: | TUV, VCCI, BSMI, cUL, CB, IC, FCC, RoHS, KCC, halogen-free, RCM |
| Depth: | 110 mm |
| Device Type: | Solid state drive - internal |
| Encryption Algorithm: | 256-bit AES-XTS |
| Features: | V-NAND Technology, Samsung Elpis Controller |
| Form Factor: | M.2 22110 |
| Hardware Encryption: | Yes |
| Height: | 3.8 mm |
| Humidity Range Operating: | 5 - 95% (non-condensing) |
| Interface: | PCIe 4.0 x4 (NVMe) |
| Interfaces: | PCI Express 4.0 x4 (NVMe) |
| Internal Data Rate: | 5500 MBps (read) / 2000 MBps (write) |
| MTBF: | 2,000,000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Max Storage Temperature: | 85 °C |
| Min Operating Temperature: | 0 °C |
| Min Storage Temperature: | -40 °C |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Non-Recoverable Errors: | 1 per 10^17 |
| Power Consumption: | 8 Watt (read) ¦ 8.2 Watt (write) ¦ 2.5 Watt (idle) |
| Shock Tolerance (non-operating): | 1500 g |
| Version: | original |
| Vibration Tolerance (non-operating): | 20 g @ 10-2000 Hz |
| Weight: | 20 g |
| Width: | 22 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
| Warnings: | Warnings Other Storage Products International.pdf |
| Safety instructions: | Safety instructions Other Storage Products International.pdf |
Samsung SSD MZ1L21T9HCLS-00A07 PM9A3 1.9TB M.2 22X110 NVMe GEN4 PCIE Bare
| 4KB Random Read: | 800000 IOPS |
|---|---|
| 4KB Random Write: | 85000 IOPS |
| Bytes per Sector: | 512 |
| Capacity: | 1.92 TB |
| Compatible Bay: | M.2 22110 |
| Compliant Standards: | TUV, VCCI, BSMI, cUL, CB, IC, FCC, RoHS, KCC, halogen-free, RCM |
| Depth: | 110 mm |
| Device Type: | Solid state drive - internal |
| Encryption Algorithm: | 256-bit AES-XTS |
| Features: | V-NAND Technology, Samsung Elpis Controller |
| Form Factor: | M.2 22110 |
| Hardware Encryption: | Yes |
| Height: | 3.8 mm |
| Humidity Range Operating: | 5 - 95% (non-condensing) |
| Interface: | PCIe 4.0 x4 (NVMe) |
| Interfaces: | PCI Express 4.0 x4 (NVMe) |
| Internal Data Rate: | 5500 MBps (read) / 2000 MBps (write) |
| MTBF: | 2,000,000 hours |
| Manufacturer: | Samsung |
| Max Operating Temperature: | 70 °C |
| Max Storage Temperature: | 85 °C |
| Min Operating Temperature: | 0 °C |
| Min Storage Temperature: | -40 °C |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Non-Recoverable Errors: | 1 per 10^17 |
| Power Consumption: | 8 Watt (read) ¦ 8.2 Watt (write) ¦ 2.5 Watt (idle) |
| Shock Tolerance (non-operating): | 1500 g |
| Version: | original |
| Vibration Tolerance (non-operating): | 20 g @ 10-2000 Hz |
| Weight: | 20 g |
| Width: | 22 mm |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
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