Samsung M378A1K43CB2-CTD
Samsung M378A1K43CB2-CTD - Memory - 8 GB - DDR4-2666 - 288-pin UDIMM - Non-ECC - Unbuffered - 1Rx8 - 1.2 V
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Samsung M378A1K43CB2-CTD - Memory - 8 GB - DDR4-2666 - 288-pin UDIMM - Non-ECC - Unbuffered - 1Rx8 - 1.2 V
| Capacity: | 8 GB |
|---|---|
| Chips Organization: | 1024 x 8 |
| Compliant Standards: | RoHS, Lead-Free, halogen-free |
| Data Integrity Check: | Non-ECC |
| Features: | Single rank, On-Die Termination (ODT), Serial Presence Detect (SPD), sixteen banks, unbuffered |
| Form Factor: | DIMM 288-pin |
| Latency Timings: | CL19 (19-19-19) |
| Manufacturer: | Samsung |
| Module Configuration: | 1024 x 64 |
| Module Height (inch): | 1.23 |
| Speed: | 2666 MHz (PC4-21300) |
| Technology: | DDR4 SDRAM |
| Type: | DRAM memory module |
| Upgrade Type: | Generic |
| Version: | original |
| Voltage: | 1.2 V |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
| Warnings: | Warnings Storage & Memories International.pdf |
| Safety instructions: | Safety instructions Storage & Memories International.pdf |
Samsung M378A1K43CB2-CTD - Memory - 8 GB - DDR4-2666 - 288-pin UDIMM - Non-ECC - Unbuffered - 1Rx8 - 1.2 V
| Capacity: | 8 GB |
|---|---|
| Chips Organization: | 1024 x 8 |
| Compliant Standards: | RoHS, Lead-Free, halogen-free |
| Data Integrity Check: | Non-ECC |
| Features: | Single rank, On-Die Termination (ODT), Serial Presence Detect (SPD), sixteen banks, unbuffered |
| Form Factor: | DIMM 288-pin |
| Latency Timings: | CL19 (19-19-19) |
| Manufacturer: | Samsung |
| Module Configuration: | 1024 x 64 |
| Module Height (inch): | 1.23 |
| Speed: | 2666 MHz (PC4-21300) |
| Technology: | DDR4 SDRAM |
| Type: | DRAM memory module |
| Upgrade Type: | Generic |
| Version: | original |
| Voltage: | 1.2 V |
| GPSR - economic actor: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
|---|---|
| GPSR - product manufacturer: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| GPSR - EU responsible person: | Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de |
| EU Data-Act-Url: | https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/ |
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