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Samsung M425R2GA3BB0-CQK

Samsung M425R2GA3BB0-CQK - Memory - 16 GB - DDR5-4800 - SO-DIMM - 1Rx8 - 262-pin - 1.1 V

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Samsung M425R2GA3BB0-CQK - Memory - 16 GB - DDR5-4800 - SO-DIMM - 1Rx8 - 262-pin - 1.1 V
Capacity: 16 GB
Compliant Standards: JEDEC
Form Factor: SO-DIMM 262-pin
Height: 30 mm
Latency Timings: CL40 (40-39-39)
Manufacturer: Samsung
Speed: 4800 MHz (PC5-38400)
Technology: DDR5 SDRAM
Type: DRAM memory module
Upgrade Type: Generic
Version: original
Voltage: 1.1 V
GPSR - economic actor: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
GPSR - product manufacturer: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
GPSR - EU responsible person: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
EU Data-Act-Url: https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/
Warnings: Warnings Storage & Memories International.pdf
Safety instructions: Safety instructions Storage & Memories International.pdf

Delivery time: Delivery time on request The stated delivery times apply to shipping within Germany. Information on deliveries to other countries can be found here.

Product number: 1531777-1150667
Samsung M425R2GA3BB0-CQK - Memory - 16 GB - DDR5-4800 - SO-DIMM - 1Rx8 - 262-pin - 1.1 V
Capacity: 16 GB
Compliant Standards: JEDEC
Form Factor: SO-DIMM 262-pin
Height: 30 mm
Latency Timings: CL40 (40-39-39)
Manufacturer: Samsung
Speed: 4800 MHz (PC5-38400)
Technology: DDR5 SDRAM
Type: DRAM memory module
Upgrade Type: Generic
Version: original
Voltage: 1.1 V
GPSR - economic actor: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
GPSR - product manufacturer: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
GPSR - EU responsible person: Samsung, Deutschland, Am Kronberger Hang 6, Schwalbach, 65824, pay@samsung.de
EU Data-Act-Url: https://www.samsung.com/us/account/privacy-policy/data-privacy-framework/

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